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DS: Dünne Schichten

DS 22: Postersitzung

DS 22.18: Poster

Dienstag, 9. März 2004, 14:30–17:00, Poster B

Single domain growth of C₆₀ on modified InP(001) and chemical passivation of the molecular structure — •Maxim Eremtchenko, Stefan Döring, Ruslan Temirov, and Juergen A. Schaefer — Institut für Physik und Zentrum für Mikro- und Nanotechnologien, Technische Universität Ilmenau, P.O. Box 100565, 98684 Ilmenau, Germany

Fullerenes and its functionalisation are very promising in nanoscale fabrication. Its performance is often limited by structural inhomogenities and chemical instability. Recently, we reported upon single domain growth of C₆₀ on InP(001), which is technologically very promising. In this contribution growth of C₆₀ on InP(001) covered with indium clusters, the most prominent defect on InP was investigated. Single domain growth is still registered by LEED and STM. The reaction of atomic hydrogen with the single domain of C₆₀ was studied using HREELS. The cages are easily cracked by hydrogen and hydrocarbons are formed. This layer is stable against further reaction with atomic hydrogen, oxygen or air. It seems that this technique of passivation can be applied for the protection of various molecular structures in technological processes.