Regensburg 2004 – scientific programme
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DS: Dünne Schichten
DS 22: Postersitzung
DS 22.19: Poster
Tuesday, March 9, 2004, 14:30–17:00, Poster B
Growth of ITO thin films by ion beam assisted deposition — •Karola Thiele1, Jörg Hoffmann2, Sibylle Sievers1, and Herbert C. Freyhardt1,2 — 1Institut für Materialphysik, Tammannstr.1, 37077 Göttingen — 2Zentrum für Funktionswerkstoffe, Windausweg 2, 37073 Göttingen
Indium Tin Oxide (ITO), a doped, wide-band-gap highly degenerated oxide semiconductor exhibits high transmittance in the visible region and high electrical conductivity. Therefore, ITO thin films are widely used as transparent conducting electrodes for a variety of electro/optical devices. For many applications on temperature sensitive substrates, deposition at room temperature is desired. Furthermore, highly textured ITO films might be useful as an electrically conductive buffer layer for HTS applications.
Biaxially aligned ITO thin films were prepared by an Ion-Beam Assisted Deposition (IBAD) process at low temperatures. The influence of various deposition parameters on the growth is discussed as well as the microstructure evolution, mechanisms of texture development and electrical properties.
The quality of IBAD-ITO as a highly transparent and highly conductive material has been demonstrated and the suitability as a buffer layer for high-current carrying YBCO thin films has been proved.