Regensburg 2004 – scientific programme
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DS: Dünne Schichten
DS 22: Postersitzung
DS 22.1: Poster
Tuesday, March 9, 2004, 14:30–17:00, Poster B
In-Situ Reflectance Anisotropy Spectra (RAS) Investigation — •Thorsten Bork1 and A. Bakin2 — 1Hahn-Meitner-Institute, Berlin, Germany — 2Institute for Semiconductor Technology - Technical University of Braunschweig, Germany
For the industrial development of the benefits of III/V and Si monolithical integration it is necessary to grow these structures on exactly oriented(001)Si substrates. A detailed investigation of the growth of a buffer layer is described here. In our present work we also develop thick InP layer growth on Si. The growth of InP layers was performed in horizontal IR-heated MOVPE AIX-200 machines. The growth of 40-nm thick InP buffer layers was performed employing phosphine (PH3) and as alternative phosphorus source TBP. The further growth of the 2000-4000nm thick InP layers was performed employing the phosphorus source TBP. In-situ reflectance anisotropy spectra (RAS) investigations have been for the first time employed to monitor and optimize the InP growth on Si. The samples were investigated using atomic-force microscopy(AFM), scanning electron microscopy (SEM), transmission electron microscopy(TEM), x-ray diffraction (XRD), x-ray photoelectron spectroscopy (XPS) as well as defect etching and optical microscopy with Nomarski contrast. The process of InP growth observed is discussed. The influence of different source gas flows and growth temperatures is investigated.