Bereiche | Tage | Auswahl | Suche | Downloads | Hilfe

DS: Dünne Schichten

DS 22: Postersitzung

DS 22.37: Poster

Dienstag, 9. März 2004, 14:30–17:00, Poster B

Heteroepitaxial growth of cubic boron nitride films on Single Crystalline (001) Diamond Substrates — •H. Yin, X.W. Zhang, H.-G. Boyen, and P. Ziemann — Abteilung Festkörperphysik, Universität Ulm, D-89069 Ulm

In addition to hard coating applications, cubic boron nitride (c-BN) is also considered as a starting material for high-temperature electronic devices. In order to use c-BN for such a purpose, a high structural quality of the corresponding samples appears necessary. To approach this goal, heteroepitaxial c-BN films were grown by ion beam assisted deposition (IBAD) on highly oriented (100) diamond substrates at high temperatures (∼1000^∘C). Combination of several characterization techniques showed that 100% pure c-BN films prepared at elevated temperatures on top of (100) diamond nucleate and grow directly on this substrate without an interfering hexagonal BN layer. Atomic force microscopy of such high quality c-BN films shows a well-defined square pattern with an average lateral grain size of 3 µm reflecting the grain boundaries of the underlying diamond substrate. As opposed to c-BN growth on top of heteroepitaxially prepared CVD diamond films delivering typical rocking widths of ΔΩ = 4.6^∘, c-BN films deposited on single crystalline (001) diamond substrates exhibit significantly improved values of 0.2^∘. The smooth surface and extremely high hardness and Young’s modulus are further indications of the high quality epitaxial growth of c-BN films on single crystalline diamond substrates.