Regensburg 2004 – scientific programme

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DS: Dünne Schichten

DS 22: Postersitzung

DS 22.42: Poster

Tuesday, March 9, 2004, 14:30–17:00, Poster B

MgO films for PDP applications - the measurement of the ion induced secondary electron emission and optical properties in dependence on the deposition parameters — •Ronny Kleinhempel, Hartmut Kupfer, Frank Richter, Thomas Welzel, and Thoralf Dunger — TU Chemnitz, Institut für Physik, 09107 Chemnitz

MgO films were deposited by a reactive pulsed mid-frequency sputtering technique using a bipolar dual magnetron source. The transition range of the target was used to get a high deposition rate.

The optical properties (refractive index n and optical absorption k) were measured using the spectral ellipsometry. Beside n and k the ion induced secondary electron emission coefficient γ plays an important role for characterising dielectric layers (MgO) which are used in plasma display panels (PDP). The γ was estimated measuring the breakdown voltages in a He atmosphere in a simple diode-discharge device. MgO films show γ values of about 0.5. The γ decreases to 0.3 at the transition to the oxide state and the metallic state as well.

Atomic force microscopy (AFM), X-ray diffraction (XRD) and X-ray reflectometry (XRR) were applied to characterise the structure of the films. Structural information are compared to the behaviour of the γ value as a function of O₂ flow rate in the transition range of the target.