Regensburg 2004 – scientific programme
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DS: Dünne Schichten
DS 22: Postersitzung
DS 22.46: Poster
Tuesday, March 9, 2004, 14:30–17:00, Poster B
Real time spectroscopic in situ ellipsometry monitoring of Mo/Si multilayer growth — •E. Schubert, A. Köhler, J. W. Gerlach, Frank Frost, G. Wagner, H. Neumann, and B. Rauschenbach — Leibniz-Institut für Oberflächenmodifizierung e. V., Permoserstraße 15, D-04318 Leipzig, Germany
Mo/Si multilayer mirrors with 10 or 50 bilayer periods are grown by Ar ion beam sputtering onto [100] Si substrates. The growth is monitored by spectroscopic in situ ellipsometry (visible spectral region) in real time. The model analysis of the experimental data allows the determination of Mo and Si single layer thickness with a certainty of ± 0.3 nm. Therefore the reflection restricting parameters bilayer thickness and thickness ratio of the Mo and Si layers (Γ) can be precisely determined. Additionally the Mo/Si multilayers are characterized by CuKα reflectometry, EUV reflectometry at λ = 13.4 nm and TEM. The investigations reveal homogenous vertical thickness distribution within the multilayer stack The bilayer thickness obtained by in situ ellipsometry is confirmed by the other techniques. Surface roughness was determined by AFM and amounts RMS = 0.13 nm for 50 periods multilayers and RMS = 0.11 nm for 10 periods multilayers, respectively.