Regensburg 2004 – scientific programme

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DS: Dünne Schichten

DS 22: Postersitzung

DS 22.48: Poster

Tuesday, March 9, 2004, 14:30–17:00, Poster B

Temperature-dependent surface photovoltage of polycrystalline Cu(In,Ga)Se₂ from photoemission studies using synchrotron radiation — •Andreas Klein, Thomas Schulmeyer, and Ralf Hunger — Technische Universität Darmstadt, Petersenstrasse 23, D-64287 Darmstadt

A deep insight of surfaces and interfaces is essential for improving the knowledge of the complex interface behaviour of Cu-chalcopyrites. In this contribution, temperature-dependent photovoltage measurements with synchrotron radiation induced photoelectron emission of polycrystalline Cu(In,Ga)Se₂ surfaces and Cu(In,Ga)Se₂/CdS interfaces are presented. Clean Cu(In,Ga)Se₂ surfaces are prepared with the Se de-capping procedure. Additionally, defined oxidized Cu(In,Ga)Se₂ and de-capped CuGaSe₂ absorbers were investigated. All chalcopyrite surfaces show a Cu-poor surface composition.