Regensburg 2004 – scientific programme

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DS: Dünne Schichten

DS 22: Postersitzung

DS 22.5: Poster

Tuesday, March 9, 2004, 14:30–17:00, Poster B

Influence of X-ray Radiation on the Chemical Composition of Plasma Deposited Fluorocarbon Films — •Vasil Yanev¹, Stefan Krischok¹, Andreas Opitz¹, Norbert Schwesinger², Helmut Wurmus¹, and Juergen A. Schaefer¹ — ¹Zentrum für Mikro- und Nanotechnologien, TU Ilmenau, 98693 Ilmenau — ²FB Mikrostrukturierte mechatronische Systeme, TU München, 80290 München

Teflon-like fluorocarbon (FC) films are of interest for low dielectric interlayer material. Thin teflon-like FC-films were deposited via plasma polymerization of trifluoromethane (CHF₃) onto silicon substrates in a commercial reactive ion etching system (RIE, radio-frequency 13.56 MHz). Changes in the chemical composition of the deposited FC films as a function of exposure time to the X-ray radiation was investigated by X-ray photoelectron spectroscopy (Mg Kα). Surface charging of the FC films during the X-ray exposure was observed. This charging, leading to shifts in the XPS peaks, was dependent on the X-ray exposure time of the FC-films. XPS of the C 1s core levels reveals that the percentages of (-CF₃), (-CF₂) and (CF) bonds fall off sharply and the percentages of (-C-CF) type bonds increase.