Regensburg 2004 – scientific programme

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DS: Dünne Schichten

DS 22: Postersitzung

DS 22.52: Poster

Tuesday, March 9, 2004, 14:30–17:00, Poster B

Epitaxial growth and characterization of Cu0.5In0.5Se (Te) films grown on GaAs by pulsed laser deposition. — •Liudmila Roussak, Gerald Wagner, and Klaus Bente — Institute of Mineralogy, Crystallography and Materials Science, Linnestr. 3-5 (TA), D-04103 Leipzig

Alloys of Cu0.5In0.5Se(Te), as an attractive material for solar cell applications, have been grown on (001) oriented GaAs substrates by pulsed laser deposition (PLD). Epitaxial growth was found to occur for substrate temperatures ranging between 380 and 600 ^∘C. The structural, compositional, morphological and electrical properties of the Cu0.5In0.5Se(Te) films depend strongly on the substrate temperature, laser energy density and deposition rate. Applying optimized growth conditions it is possible to obtain the films of required electrical and structural characteristic. The detailed examination of late the absorber and buffer forming the heterostructure as well as their interface are very important for the efficient of thin film solar cells.