Regensburg 2004 – scientific programme

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DS: Dünne Schichten

DS 22: Postersitzung

DS 22.56: Poster

Tuesday, March 9, 2004, 14:30–17:00, Poster B

On the role of buffer layers in solar cells with extremely thin absorbers — •A. Belaidi, R. Bayon, Th. Dittrich, H. Muffler, C.-H. Fischer, and M.C. Lux-Steiner — Hahn-Meitner-Institut, SE2, Glienicker Str. 100, D-14109 Berlin, Germany

Solar cells with extremely thin absorbers have a highly developed internal surface what makes them vulnerable for surface recombination. Buffer layers as aluminum oxides and hydroxides (No-dqAl₂O₃No-dq), In₂S₃, In(OH)_xS_y between the thin absorber layer and the electron and/or hole conductors can be used to decrease surface recombination. CBD (chemical bath deposition) and ILGAR (ion layer gas reaction) techniques have been used to prepare buffer and absorber layers on porous TiO₂ substrates. The role of the buffer layers will be demonstrated on the TiO₂ / In(OH)_xS_y / PbS / PEDOT and TiO₂ / Al₂O₃ / In₂S₃ / CuInS₂ systems.