Regensburg 2004 – wissenschaftliches Programm

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DS: Dünne Schichten

DS 3: Ionenimplantation III

DS 3.1: Vortrag

Montag, 8. März 2004, 14:30–14:45, HS 31

Kinetics of ion-irradiation induced stress modifications in thin film of different microstructure — •S.G. Mayr — I. Physikalisches Institut, Georg-August-Universität Göttingen, Tammannstr. 1, 37077 Göttingen

Ion beam irradiation induced changes in the stresses operating in thin films are correlated with the thermodynamic phases of the films and the evolution in the films microstructure and morphology. We investigate using a combination of experiments and molecular dynamics computer simulations the kinetics of the processes, which lead to residual stress changes in amorphous, nanocrystalline, columnar polycrystalline and single crystal thin films. It is shown that - while local viscous relaxation within the collision cascade underlies all stress changes - the initial microstructure controls the final state of stress.
Financially supported by the DFG - SFB 602, TP B3.