Regensburg 2004 – wissenschaftliches Programm

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DS: Dünne Schichten

DS 4: Prozesscharakterisierung

DS 4.1: Vortrag

Montag, 8. März 2004, 16:00–16:15, HS 31

Epitaxial Growth of Thin, Atomically Flat Cu-Films on GaAs(110) — •J. Müller, M. Wenderoth, N. Quaas, T. C. G. Reusch, and R. G. U. Ulbrich — IV. Physikalisches Institut der Universität Göttingen, Tammanstrasse 1, 37077 Göttingen

We present STM-studies of thin Copper films in the thickness range from 5 to 19 monolayers grown at 80K on UHV-cleaved GaAs(110). After annealing to room temperature the Cu films show clear evidence for a morphology resembling 2D layer by layer growth. Long-time STM-investigations reveal a continuously reduction of the film roughness, leading to atomically flat films. In comparison with a single crystal the atom dynamics on the surface is reduced. After annealing to 380K, we observe a transition from Schottky- to metal-type behaviour in the STS-current associated with a flat morphology. Our study confirms the theoretical assumption that this system can be described by the model of electronic growth [1]. The work was financially supported by the SFB 602.

[1] Z. Zhang, Q. Niu, C.-K. Shih, Phys.Rev.Lett. 80, 5381 (1998)