DS 4: Prozesscharakterisierung
Monday, March 8, 2004, 16:00–17:00, HS 31
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16:00 |
DS 4.1 |
Epitaxial Growth of Thin, Atomically Flat Cu-Films on GaAs(110) — •J. Müller, M. Wenderoth, N. Quaas, T. C. G. Reusch, and R. G. U. Ulbrich
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16:15 |
DS 4.2 |
Time-resolved Langmuir double probe measurement in a asymmetric bipolar pulsed magnetron discharge for the deposition of MgO thin films — •Thoralf Dunger, Thomas Welzel, Hartmut Kupfer, and Frank Richter
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16:30 |
DS 4.3 |
Nanostructure Development in Compound, Magnetron-Sputtered PVD Thin Films — •Vladislav Spassov, Alan Savan, and Henry Haefke
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16:45 |
DS 4.4 |
Beschleunigte Festphasenkristallisation von amorphem Silizium auf polykristallinen Saatschichten — •Silke Hübner, Erhard Conrad, Martin Muske, Stefan Gall und Walther Fuhs
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