HL 10: Baulemente
Montag, 8. März 2004, 15:15–16:30, H13
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15:15 |
HL 10.1 |
Efficiency of High-Brightness AlGaInP LEDs: Model and Experiment — •P. Altieri, A. Jaeger, R. Windisch, N. Linder, P. Stauss, R. Oberschmid, and K. Streubel
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15:30 |
HL 10.2 |
The Source-Gated Thin-Film Transistor — •Thomas Lindner, Gernot Paasch, and Susanne Scheinert
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15:45 |
HL 10.3 |
Patterning of sub 50 nm structures for diffusion investigations in vertical Double-Gate MOSFETs — •Jürgen Moers, Stefan Trellenkamp, Susan Kluth, Patrick Kluth, David Alvarez, Johannes Kretz, Siegfried Mantl, and Hans Lüth
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16:00 |
HL 10.4 |
Electrical characterization of temporary devices fabricated with a double-tip AFM on semiconductive surfaces — •A.-D. Müller, F. Müller, T.D. Long, L.Q.T. Dung, J. Mehner, and M. Hietschold
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16:15 |
HL 10.5 |
Simulation and fabrication of complementary tunneling transistors in silicon — •Peng-Fei Wang, Thomas Nirschl, Marcus Weis, Doris Schmitt-Landsiedel, and Walter Hansch
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