Regensburg 2004 – scientific programme
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HL: Halbleiterphysik
HL 10: Baulemente
HL 10.4: Talk
Monday, March 8, 2004, 16:00–16:15, H13
Electrical characterization of temporary devices fabricated with a double-tip AFM on semiconductive surfaces — •A.-D. Müller1, F. Müller1, T.D. Long1, L.Q.T. Dung1, J. Mehner2, and M. Hietschold1 — 1Chemnitz University of Technology, Institute of Physics, Solid Surface Analysis Group, 09107 Chemnitz — 2Chemnitz University of Technology, Institute of Electrical Engineering and Information Technology, 09107 Chemnitz
Using a multiple cantilever device, semiconductor devices can be created temporarily on a semiconductors surface to perform an electrical measurement. The obtained electrical characteristics of such devices represent the local electrical surface properties at the moment of the measurement.
This contribution presents the application of a double cantilever, which has two tips with a lateral distance of 10 µm. Each tip has its own vertical actuator, so that they can be placed on the surface independently of each other with a detectable contact force in an Atomic Force Microscope set-up. The observed electrical characteristics are compared with circuit simulations using a MESFET model instead of the temporary device. On silicon (111) with a natural oxide layer, for instance, a high surface conductivity and a high barrier at the temporarily formed Pt/Si-interfaces have been found.