Regensburg 2004 – scientific programme

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HL: Halbleiterphysik

HL 11: Neue Materialien

HL 11.3: Talk

Monday, March 8, 2004, 15:45–16:00, H14

Silicon Nanowires – Analysis of the SiO/VLS Growth Mechanism — •Florian M. Kolb, Herbert Hofmeister, Roland Scholz, Margit Zacharias, and Ulrich Gösele — Max–Planck–Institut für Mikrostrukturphysik, 06120 Halle(Saale)

Silicon nanowires are possible building blocks for new nanoscale devices and can provide a system for investigating the physics of low-dimensional semiconductor structures. We have successfully produced silicon nanowires on gold-coated silicon substrates by evaporation of silicon monoxide (SiO), according to the Vapor-Liquid-Solid (VLS) mechanism. Transmission electron microscope investigations, including HRTEM, electron diffraction and energy-dispersive X-ray spectroscopy, were used to analyze the structure of the nanowires and to confirm the VLS growth mechanism. We found that the nanowires exhibit different crystallographic growth directions than those from CVD processes. Based on these investigations we suggest a model which combines the VLS mechanism with SiO evaporation. The phenomena of nanowire diameter-oscillations and the effect of the growth parameters are discussed.