Regensburg 2004 – scientific programme

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HL: Halbleiterphysik

HL 12: Poster I

HL 12.16: Poster

Monday, March 8, 2004, 16:30–19:00, Poster A

Optical bandgap determination of MOVPE-grown hexagonal InN — •Raimund Kremzow, Bert Rähmer, Massimo Drago, Christoph Werner, and Wolfgang Richter — TU-Berlin, Institut für Festkörperphysik, Hardenbergstr. 36, 10623 Berlin

The electronic properties of hexagonal InN were intensively discussed in the recent years. Particularly different bandgap values were reported for MBE-grown or sputtered materials [1]. In this work we present photoluminescence studies of MOVPE-grown InN. For epitaxial growth similar problems occur as for GaN, due to the high lattice mismatch of the nitrides in comparison to substrate commonly used. We used GaN buffer layers to reduce this misfit and grew epitaxial InN layers [2]. To reduce the defect density the samples were thermally annealed. The bandgap of samples with different doping was determined ex-situ by photoluminescence and optical absorption spectroscopy. First results confirm bandgap values at 0.7-0.8 eV similar to those found for MBE-grown samples [1].

[1] V. Yu. Davydov et al., phys. stat. sol. (b) 230, No. 2, R4-6 (2002)

[2] M. Drago et al., phys. stat. sol. (a) 195, No. 1, 3-10 (2003)