Bereiche | Tage | Auswahl | Suche | Downloads | Hilfe

HL: Halbleiterphysik

HL 12: Poster I

HL 12.34: Poster

Montag, 8. März 2004, 16:30–19:00, Poster A

Crystal orientation dependence of pores in InP for photonic crystal applications — •Stefan Lölkes, Sergiu Langa, Jürgen Carstensen, and Helmut Föll — Technische Fakultät, Christian-Albrechts-Universität zu Kiel, Kaiserstr. 2, 24143 Kiel

For the field of Photonic Crystals (PhCs), electrochemically etched macroporous Si has set milestones[1]. All III/V semiconductor based PhCs have so far been produced by plasma-etching. In 2003, Langa et al.[2] showed uniform electrochemical pore etching in InP with tremendous aspect ratios for 2D InP PhCs. To produce PhCs with a full 3D photonic band gap, several authors have proposed fabrication methods where first a set of slanted pores is drilled electrochemically [3], followed by highly directional dry etching to introduce a second pore set orthogonal to the first one. On Si, slanted pores can be fabricated by using custom cut wafers[4]. These experiments are transferred to InP to investigate the orientation dependence of pore growth, in order to make a first step towards the still elusive large scale full 3D PBG.

[1] A. Birner, R.B. Wehrspohn, U. Gösele,and K. Busch, Adv. Mater. 13, 377 (2001).

[2] S. Langa, I.M. Tiginyanu, M. Christophersen, J. Carstensen, and H.Föll, Appl- Phys. Lett., 82 (2003) 278.

[3] A. Chelnokov, K. Wang, S. Rowson, P. Garoche, and J.-M. Lourtioz, Appl. Phys. Lett. 77, 2943 (2000).

[4] CHRISTOPHERSEN, M., CARSTENSEN, J., RÖNNEBECK, S., JÄGER, C., JÄGER, W., FÖLL, H., J. Electrochem. Soc. 148 (6), E267 (2001).