Regensburg 2004 – scientific programme
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HL: Halbleiterphysik
HL 12: Poster I
HL 12.3: Poster
Monday, March 8, 2004, 16:30–19:00, Poster A
Five source PVD for the deposition of CIGSS thin films — •Mario Gossla1,2 and William N. Shafarman1 — 1Institute of Energy Conversion, University of Delaware, 451 Wyoming Road, Newark, DE 19716, USA — 2Institut für Festkörperphysik, Friedrich-Schiller-Universität Jena, Max-Wien-Platz 1, 07743 Jena, Germany
CuIn1−xGax(Se1−ySy)2 (CIGSS) films are being investigated as absorber layer materials for the wide-band-gap cell in a tandem or multijunction thin-film solar cell. To become a viable option for high performance photovoltaics, tandem or multijunction solar cells based on polycrystalline thin films will require a wide band gap top cell with at least 15 % efficiency, optical band gap in the range 1.7 ≤ Eg ≤ 1.9 eV, and small sub-band gap absorption.
A new five-source deposition system was developed for the deposition of CIGSS thin films. Thin films within the complete compositional range of 0 ≤ x ≤ 1, and 0 ≤ y ≤ 1 were deposited on Mo-coated soda lime glass at different temperatures. The films were analyzed by means of IR, SEM, and XRD. The incorporation of sulfur in the films depends strongly on the sulfur concentration in the vapor phase, substrate temperature, and Cu/In ratio. Complete Mo/CIGSS/CdS/-ZnO/NiAl solar cells with a typical area of 0.5 cm2 were prepared. Cell performance was monitored by QE and I-V measurements and is shown to strongly depend on sulfur content.