Regensburg 2004 – wissenschaftliches Programm

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HL: Halbleiterphysik

HL 12: Poster I

HL 12.58: Poster

Montag, 8. März 2004, 16:30–19:00, Poster A

Chemical Vapour Deposition of Silicon Nanowires — •Volker Schmidt, Stephan Senz, and Ulrich Goesele — Max Planck Institut für Mikrostrukturphysik, 06120 Halle

Silicon nanowires are synthesized by chemical vapour deposition in ultra high vacuum environment via the vapour-liquid-solid growth mechanism. For this process silane is used as the precursor gas and gold dots act as catalysts. The diameter of a single nanowire is determined by the size of the gold particle. We investigate by scanning electron microscopy and transmission electron microscopy the quality of the epitaxial growth of the nanowires on silicon substrates of different orientation ((100) and (111)). The effects of substrate temperature and silane partial pressure on the growth of the nanowires are analyzed. We also investigate the influence of a 2.45 GHz microwave plasma on the synthesis of the silicon nanowires. The minimum substrate temperature is reduced and some of the nanowires change their growth direction.