Regensburg 2004 – wissenschaftliches Programm
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HL: Halbleiterphysik
HL 12: Poster I
HL 12.6: Poster
Montag, 8. März 2004, 16:30–19:00, Poster A
Epitaxial growth of CuGaS2 on Si substrates investigated by high resolution X-ray diffraction — •J. Cieslak1, A. Dietz1, J. Eberhardt1, M. Gossla1, Th. Hahn1, J. Kräusslich2, H. Metzner1, U. Reislöhner1, W. Witthuhn1, and F. Wunderlich2 — 1Friedrich-Schiller-Universität Jena, Institut für Festkörperphysik, Max-Wien-Platz 1, 07743 Jena — 2Friedrich-Schiller-Universität Jena, Institut für Optik und Quantenelektronik Max-Wien-Platz 1, 07743 Jena
The wide-band gap chalcopyrite semiconductor CuGaS2 (CGS) has recently attracted some attention since its direct band gap of Egap=2.5eV (T=5K) makes it suitable for applications in tandem solar cells. We reported the epitaxial growth of high-quality CGS layers on Si(111) [1].
In this work we elucidate the epitaxial growth and structural properties of these heteroepitaxial layers. High resolution X-ray diffraction (HRXRD) was performed at the European Synchrotron Radiation Facility (ESRF) in Grenoble (France). High-precision ω/2θ-scans with different in-plane diffraction vectors were carried out.
It was found, that the CGS layers show lattice parameters resembling those reported in literature for bulk material and that any existence of metastable ordering, prominent in epitaxial layers of CuInS2, can be ruled out. This behaviour is discussed within the context of the observed epitaxial relations between CGS and Si(111) as well as Si(100) substrates.
[1] H. Metzner et al., Appl. Phys. Lett., 81(1), 156 (2002).