Regensburg 2004 – scientific programme
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HL: Halbleiterphysik
HL 12: Poster I
HL 12.73: Poster
Monday, March 8, 2004, 16:30–19:00, Poster A
High luminescence yield of N-doped ZnO thin films on sapphire grown by PLD — •M. Lorenz1, H. Hochmuth1, J. Lenzner1, G. Benndorf1, H. von Wenckstern1, A. Rahm1, A. Schön2, S. Borenstain2, and M. Grundmann1 — 1Universität Leipzig, Fakultät für Physik und Geowissenschaften, Linnéstr. 5, 04103 Leipzig, Germany — 2El-Mul Technologies Ltd., Soreq, Yavne 81104, Israel
Pulsed Laser Deposition (PLD) has proved to be a highly flexible technique for the epitaxy of high-quality ZnO thin films on c-, and a-plane sapphire substrates. A remarkable improvement of cathodoluminescence intensity at room temperature and homogeneous luminescence across the substrate (typically 10x10 mm2, presently up to 2No-dq) were achieved for heavily N-doped ZnO thin films with MgO buffer layer in comparison to nominally undoped ZnO. The N-doping level of the ZnO films was controlled by the N2 partial pressure during PLD growth. Clear correlation of maximum luminescence efficiency, and FWHM of excitonic emission peak at 300K to the nitrogen doping level was found. The N-doped ZnO films with highest luminescence intensity show n-type carrier concentration around 1019 cm−3.
Supported by BMBF within Wachstumskern INNOCIS (03WKI09) and DFG (SPP 1136 and FOR 522).