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HL: Halbleiterphysik

HL 12: Poster I

HL 12.78: Poster

Montag, 8. März 2004, 16:30–19:00, Poster A

Nitrogen doping of ZnO and post-growth rapid thermal annealing — •Nikolay Oleynik¹, Armin Dadgar¹, Daniel Forster¹, Frank Bertram¹, Jürgen Bläsing¹, Andre Krtschil¹, Annette Diez¹, Thomas Hempel¹, Karsten Fehse¹, Jürgen Christen¹, Alois Krost¹, Markus Seip², and Arnd Greiling² — ¹Otto-von-Guericke University Magdeburg IEP, FNW, Postfach 4120, 39016 Magdeburg, Germany — ²mochem GmbH, Marburg, Germany

Nitrogen doping is a promising way to achieve p-type doping of ZnO layers. We have systematically investigated MOVPE grown N-doped ZnO layers. For N doping we have used NH₃, NO or UDMHy as precursors. ZnO layers were grown using a two step growth procedure on GaN on Sapphire templates starting with a low-temperature buffer layer on which a high-temperature ZnO layer is grown using N₂O and DMZn at 750 - 1050^∘C. The UDMHy flows were varied from 0-150 sccm, and NO flows were varied from 0-750 sccm. We observe a brownish color of the ZnO layers either at low growth temperature or high UDMHy or NH₃ flows. Upon annealing under O₂ ambient at 800-900^∘C the color is bleached out. No change in color was observed for NO-doped ZnO. We will report on structural, morphological, optical and electrical properties of the films.