Regensburg 2004 – scientific programme

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HL: Halbleiterphysik

HL 12: Poster I

HL 12.8: Poster

Monday, March 8, 2004, 16:30–19:00, Poster A

Application of the steady-state photocarrier grating technique to polymorphous silicon — •Nacera Souffi and Rudolf Brüggemann — Institut für Physik, Carl von Ossietzky Universität Oldenburg

The steady-state photocarrier grating (SSPG) technique has become a standard tool for the characterisation of the minority carrier properties in amorphous silicon. We apply the technique to a similar thin-film semiconductor, labelled polymorphous silicon. Polymorphous silicon is discussed as an alternative to amorphous silicon in photovolatic applications. Values for the minority carrier diffusion length in polymorphous silicon are in the range between 170 and 250 nm, comparable to high-quality amorphous silicon. In this contribution we detail the strong dependence of the diffusion-length value on the photogeneration rate and relate this dependence to features in the density-of-states (DOS) profile, which we discuss in comparison with the DOS in amorphous silicon.