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HL: Halbleiterphysik

HL 16: GaN: Bauelemente

HL 16.9: Vortrag

Dienstag, 9. März 2004, 12:15–12:30, H13

Heat Dissipation in GaN LEDs and LDs - Simulation and Experiment — •Stephan Figge¹, Tim Böttcher¹, Sven Einfeldt¹, Detlef Hommel¹, Christoph Zellweger², Mark Ilegems², Patrick Waltereit³, and James Speck³ — ¹Institut für Festkörperphysik, Universität Bremen — ²Institut de photonique et d’electronique quantiques, Ecole Polytechnique Federale de Lausanne — ³The Interdisciplinary Center for Wide Band-Gap Semiconductors, University of California, Santa Barbara

The heating due to joule heat plays an important role in the device characteristics of high power GaN light emitting diodes (LEDs) and laser diodes (LDs). In this talk we will show two and three dimensional finite elements calculations on the heat dissipation in LEDs and LDs and will compare them with experiential results taken from devices grown on sapphire substrates. The data of the simulations are in excellent agreement with the experiential data such as the wavelength shift and the dependence of output power taken from devices in DC and pulsed operation. The talk will discuss the influence of the duty cycle and the pulse parameters on the heating within the active region. In addition the dependence of the thermal resistance on the device geometry (layer thicknesses, die size, substrate material) will be shown.