Regensburg 2004 – scientific programme

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HL: Halbleiterphysik

HL 21: II-VI Halbleiter II

HL 21.4: Talk

Tuesday, March 9, 2004, 16:00–16:15, H13

Comparison of planar and ridge ZnSe laser diodes — •Kai Otte, Akio Ueta, Arne Gust, Matthias Klude, and Detlef Hommel — University of Bremen

Up to now, ZnSe-based laser diodes are the only ones that provide laser emission in the yellow-green spectral region, which is interesting for e.g. display technology. However, the lifetime of these devices is limited to approximately 400 hours. An increase of lifetime can be expected for improved current confinement by processing the LD as a ridge structure.

The results of electro-optical characterization of planar and ridge ZnSe laser diodes will be presented. Measurements concerning L-I-characteristic, lifetime, temperature-sensitive wavelength-shift and far field pattern were accomplished.

The results show a distinct reduction of the threshold-current density. This leads to increased lifetimes and a higher stability of lateral modes. Measurements were mainly taken on quantum well lasers but also quantum dot lasers were briefly tested. Ridge QD Lds show a significant reduction of threshold-current density by a factor of five.

This indicates that the processing as a ridge structure is promising approach for ZnSe-laser diodes in oder to increase device lifetime.