Regensburg 2004 – scientific programme

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HL: Halbleiterphysik

HL 22: Transport im hohen Magnetfeld/Quanten-Hall-Effekt

HL 22.7: Talk

Tuesday, March 9, 2004, 16:45–17:00, H14

Two-dimensional High Mobility Holes on (110) GaAs — •Frank Fischer, Matthew Grayson, Dieter Schuh, Max Bichler, and Gerhard Abstreiter — Walter Schottky Institut, Technische Universität München, Garching, Germany

High mobility two-dimensional hole gases (2DHG) in GaAs have previously been realised by using Si as dopant on the (311)A surface [1]. On the (110) GaAs surface Si can act as both, donor and acceptor [2]. But up to now only high-mobility two-dimensional electron gases have been achieved on that orientation. We report on the first growth of high mobility two-dimensional modulation doped hole gases on the (110) GaAs orientation. We were able to achieve a 1.2K mobility of µ = 1.7×10⁵ cm²/Vs at a density of n=2.3× 10¹¹ /cm².
We will report studies of anisotropic conduction in this system as previously performed on the (311) surface [3].

[1] M. Henini, P. J. Rodgers, P. A. Crump, B. L. Gallagher, G. Hill, J. Cryst. Growth 150(1-4), 441 (1995)

[2] E. S. Tok, J. H. Neave, M. J. Ashwin, B. A. Joyce, T. S. Jones, J. Appl. Phys. 83(8), 4160 (1998)

[3] S. J. Papadakis, E. P. De Poortere, M. Shayegan, R. Winkler, Phys. Rev. Lett. 84 (24), 5592 (2000)