Regensburg 2004 – scientific programme

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HL: Halbleiterphysik

HL 28: Optische Eigenschaften

HL 28.10: Talk

Wednesday, March 10, 2004, 17:30–17:45, H17

MOVPE growth of InN layers: in-situ control of the growth parameters by Spectroscopic Ellipsometry — •Massimo Drago, Christoph Werner, Tobias L. Schenk, Torsten Schmidtling, Udo W. Pohl, and Wolfgang Richter — TU Berlin, PN6-1, Hardenbergstr. 36, 10623 Berlin

The growth of indium nitride by MOVPE is a challenging issue, particularly due to the low enthalpy of formation and the large lattice mismatch to available substrates, like e.g. sapphire. At present, the quality of MOVPE samples is not yet comparable with the MBE ones, and further optimisation is necessary. In-situ Spectroscopic Ellipsometry (SE) control turned up to be an excellent tool to understand the critical processes occurring during growth [1]. It is shown how in-situ SE can monitor the effects of changes in temperature, total pressure and V/III ratio. The ellipsometric parameters measured and the effective dielectric function behaviour are effectively related to growth rate, surface smoothening and roughening. Improved quality layers obtained through optimised growth parameters are characterised through SEM and XRD. [1] M. Drago, T. Schmidtling, U. W. Pohl, S. Peters and W. Richter; phys. stat. sol. (c), 1-4 (2003) / DOI 10.1002/pssc.200303429