Regensburg 2004 – scientific programme
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HL: Halbleiterphysik
HL 28: Optische Eigenschaften
HL 28.4: Talk
Wednesday, March 10, 2004, 16:00–16:15, H17
Excitons and Plasma: Two Sources for Excitonic Photoluminescence: — •Sangam Chatterjee1,2, Sorin Mosor2, Claudia Ell2, Galina Khitrova2, Hyatt M. Gibbs2, Walter Hoyer1, Mackillo Kira1, Stephan W. Koch1, John P. Prineas3 und Heinrich Stolz4 — 1Fachbereich Physik und Wissenschaftliches Zentrum für Materialwissenschaften, Philipps-Universität Marburg, Renthof 5, 35032 Marburg. — 2The University of Arizona, Optical Sciences Center, 1630 E. University Blvd, Tucson, AZ 85721, USA. — 3University of Iowa, Iowa City, IA 52242, USA. — 4Fachbereich Physik, Universität Rostock, D-18051 Rostock
Photoluminescence from InGaAs quantum well structures exhibits a strong peak at the energetic position of the 1s exciton resonance. This is independent of the presence of an incoherent excitonic population. We perform time-resolved photoluminescence experiments over a large range of carrier density and lattice temperatures. A detailed analyses using a microscopic theory identifies the plasma and excitonic contributions to the emission. A phase diagram for the bright incoherent excitonic contributions is then extracted. At low lattice temperatures, 4K, and intermediate and low densities small fractions of bright excitons can completely dominate the emission. For larger lattice temperatures, 50K, the excitonic contributions is negligibly small.