Regensburg 2004 – scientific programme

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HL: Halbleiterphysik

HL 28: Optische Eigenschaften

HL 28.6: Talk

Wednesday, March 10, 2004, 16:30–16:45, H17

Temperature dependence of efficient silicon light-emitting diodes prepared by ion implantation — •Jiaming Sun, Thomas Dekorsy, Wolfgang Skorupa, Bernd Schmidt, and Manfred Helm — Institut für Ionenstrahlphysik und Materialforschung, Forschungszentrum Rosendorf, 01314 Dresden

Efficient electroluminescence (EL) was observed from silicon pn diodes prepared by boron implantation [1]. The temperature dependences of the EL intensity are strongly related to the boron implantation doses, the creation of excess defects and the injection current. Effective suppression of the electron-hole recombination through non-radiative channels is observed at a high dose boron implantation (larger than 1×10¹⁵ cm⁻²) or at a high current injection. The dependences of the EL intensity on the injection current at different temperatures can be well calculated with a rate equation model. The theoretical calculations indicate that bound excitons, which are responsible for the increase of the band-edge emission at elevated temperatures, have a much higher thermal emission rate as compared to the recombination rate in the diodes implanted with a high boron dose.

[1] J.M. Sun et al., Appl. Phys. Lett. 83, 3885 (2003).