Regensburg 2004 – scientific programme

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HL: Halbleiterphysik

HL 29: Spinabh
ängiger Transport I

HL 29.5: Talk

Wednesday, March 10, 2004, 16:15–16:30, H13

Growth and Characterization of GaMnAs on GaAs (001) and (311)A — •M. Reinwald, U. Wurstbauer, M. Döppe, K. Wagenhuber, P. Tranitz, W. Wegscheider, and D. Weiss — Institut für Experimentelle und Angewandte Physik, Universität Regensburg, 93040 Regensburg, Germany

Ga_1−xMn_xAs-layers with manganese content x of about 5% have been grown by molecular beam epitaxy on GaAs (001) and (311)A substrates. SQUID measurements on the as-grown and on annealed samples show that samples on both growth surfaces are ferromagnetic, but differ both in the curie temperature and the magnetic anisotropy. Magnetotransport measurements with in plane magnetic field show a planar hall effect, so that it is possible to study the angular dependence of the switching fields by rotating the sample in the field.

Although many GaMnAs samples have been grown, it is still possible to grow GaAs/AlGaAs-heterostructures with high electron mobilities in the same growth chamber. PL measurements on these heterostructures reveal, that no manganese was incorporated into these samples. A second growth chamber specially designed for highest electron mobilities, allows the combination of ferromagnetic layers and high electron mobility structures, to carry out spin injection experiments.

This work is supported by BMBF Verbundprojekt Spinelektronik und Spinoptoelektronik in Halbleitern