Regensburg 2004 – scientific programme

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HL: Halbleiterphysik

HL 29: Spinabh
ängiger Transport I

HL 29.7: Talk

Wednesday, March 10, 2004, 16:45–17:00, H13

Molecular-beam epitaxy of (Zn,Mn)Se on Si(100) for spintronics. — •T. Slobodskyy, D. Keller, A. Slobodskyy, C. Gould, P. Grabs, G. Schmidt , and L.W. Molenkamp — Physikalisches Institut, Universität Würzburg, Am Hubland, 97074 Würzburg, Germany

Experiments on spin injection into silicon are very important for industrial applications of spintronics devices. Due to the conductance mismatch[1], diluted magnetic semiconductors like (Zn,Mn)Se are required for spin injection experiments in the diffusive transport regime.

(Zn,Mn)Se films were grown by molecular beam epitaxy on Si(100) substrates. A low temperature surface cleaning technique, in combination with subsequent Arsenic passivation, yields a surface suitable for II-VI epitaxy. A low temperature growth start involving atomic layer epitaxy and molecular enhanced epitaxy has been optimized.

The structural properties of the films were determined by high resolution X-ray diffraction and optical measurements. The surface investigated using both optical and scanning electron microscopy. SQUID and magneto-optical measurements show the expected magnetic properties of the films. Preliminary transport measurements have also been carried out.

[1] G. Schmidt, L. W. Molenkamp, A. T. Filip, and B. J. van Wees, Phys. Rev. B. 62, R4790 (2000).