Regensburg 2004 – wissenschaftliches Programm

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HL: Halbleiterphysik

HL 29: Spinabh
ängiger Transport I

HL 29.8: Vortrag

Mittwoch, 10. März 2004, 17:00–17:15, H13

Resonant tunneling diodes with magnetic emitters for spin injection experiments — •A. Slobodskyy, A. Gröger, C. Gould, T. Slobodskyy, P. Grabs, G. Schmidt, and L. W. Molenkamp — Physikalisches Institut der Universität Würzburg EP3, Am Hubland, D-97074 Würzburg, Germany

All II-VI magnetic resonant tunneling diodes (RTD) were grown by Molecular Beam Epitaxy (MBE). The emitter of the ZnSe/(Zn,Be)Se RTD contains 6% manganese, making it suitable for the injection of spin-polarized electrons at low temperatures and moderate magnetic fields. Using this type of structure, spin injection into resonant tunneling diodes (and quantum dots when patterned to sub-micron size) can be studied. After patterning, the samples were inserted into a He bath cryostat equipped with a 16 T superconducting magnet. The I/V characteristics were measured with magnetic field applied either perpendicular to, or in the plane of the quantum well. The I/V curves of the device show characteristic resonant tunneling diode behavior. When subjected to an external magnetic field the resonance shifts in agreement with the Zeeman splitting that we expect from the DMS layer.