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HL: Halbleiterphysik

HL 3: Quantenpunkte und -dr
ähte: Herstellung und Charakterisierung

HL 3.12: Vortrag

Montag, 8. März 2004, 13:00–13:15, H17

Structural properties of self-assembled InAs quantum dots — •Christian Heyn¹, Arne Bolz¹, Theophilos Maltezopoulos¹, Robert L. Johnson², and Wolfgang Hansen¹ — ¹Institut für Angewandte Physik, Universität Hamburg, Jungiusstr. 11, 20355 Hamburg, Germany — ²Institut für Experimentalphysik, Universität Hamburg, Luruper Chaussee 149, 22761 Hamburg, Germany

We fabricate self-assembled InAs quantum dots (QDs) with solid-source molecular beam epitaxy (MBE) on GaAs and AlAs substrates. The structural properties of the QDs are studied using in situ electron diffraction (RHEED), atomic force microscopy (AFM), and x-ray-diffraction, with emphasis on the growth parameter dependence of the QD density, size, and composition as well as on the critical coverage up to QD formation. In a second step, we develop a kinetic rate-equations based model of the strain-induced InAs quantum dot formation and refine the model assumptions by comparing calculation results with experimental data.