Regensburg 2004 – wissenschaftliches Programm

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HL: Halbleiterphysik

HL 31: Grenz- und Oberfl
ächen

HL 31.3: Vortrag

Mittwoch, 10. März 2004, 17:15–17:30, H14

Stability and electronic properties of silicates in the system SiO₂ - Pr₂O₃ - Si(001) — •Dieter Schmeißer¹ and Hans-Joachim Müssig² — ¹BTU Cottbus, Lehrstuhl Angewandte Physik II / Sensorik, Universitätsplatz 3-4, 03044 Cottbus, Germany — ²IHP, Im Technologiepark 25, D-15236 Frankfurt (Oder), Germany

Hetero- oxides are the candidates to replace SiO₂ as the gate dielectric material for sub-0.1µm CMOS technology. In particular, the basic interaction mechanisms at the interface are a key issue and a solid knowledge of these mechanisms is required to address reliability issues. The challenge in material science is to understand the chemical bonding of the hetero oxides and Si on a microscopic scale. This report focuses on the interaction of the high dielectric constant (DK) material Pr₂O₃ with SiO₂ and the bare Si(001) surface. Photoelectron spectroscopy (PES) using tunable Synchrotron radiation (undulator U49/2 at BESSY II) is shown to provide spectroscopic information which is used for characterization of the electronic structure elements at the interface as well as for a non-destructive depth profiling. The chemical state of the Si atoms at the interface is identified and the chemical stability of the various oxide phases is discussed. We determine the variation of the elemental composition across the interface and follow the stability of the silicate phase.