Regensburg 2004 – scientific programme

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HL: Halbleiterphysik

HL 31: Grenz- und Oberfl
ächen

HL 31.5: Talk

Wednesday, March 10, 2004, 17:45–18:00, H14

reconstruction of theCuGaSe₂ (001) surface — •Thalia Deniozou¹, Norbert Esser¹, and Susanne Siebentritt² — ¹Institut fur Festkorperphysik, TU Berlin, Hardenbergstr. 36, 10623 Berlin — ²Hahn-Meitner-Institut Berlin, Glienicker Str. 100, 14109 Berlin

Although chalcopyrites have been used as absorber in thin film solar cells for nearly 30 years not much is known about their surface reconstruction, which might be an important information towards interface optimization. We have studied the chalcopyrite CuGaSe₂ (001) surface preparation by Ar+ ion bombardment and annealing. The samples were grown by MOCVD on a (001) GaAs substrate on axis with a near-stoichiometric ratio Cu/Ga. The preparation was optimized so that we finally obtained a flat, well-ordered surface. The composition was analyzed with AES and a reconstruction of the surface was observed with LEED for the first time.