Regensburg 2004 – scientific programme
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HL: Halbleiterphysik
HL 31: Grenz- und Oberfl
ächen
HL 31.6: Talk
Wednesday, March 10, 2004, 18:00–18:15, H14
Electrical force spectroscopy of silicon surfaces - experiment and theory — •J. Yukecheva1, F. Müller1, Y. Suzuki2, A.-D. Müller1, H. Angermann3, and M. Hietschold1 — 1Chemnitz University of Technology, Institut of Physics, Solid Surface Analysis Group, 09107 Chemnitz — 2Chemnitz University of Technology, Institut of Physics, Semiconductor Physics, 09107 Chemnitz — 3Hahn-Meitner-Institut, Department Silicon photovoltaics, Berlin, Kekulestr. 5, 12489 Berlin
In dynamic noncontact-mode in Atomic Force Microscopy, the simultaneous detection of surface potentials and tip-sample capacitances is possible during the acquisition of images. On the semiconductor devices, this method allows the detection of oxide thicknesses, contamination layers or dopant density variations.
Here, these electrical signals are detected on silicon surfaces in dependence on the applied bias between tip and sample. This method, the electrical force spectroscopy, is highly sensitive for surface states. Therefore, small changes in the silicon preparation already lead to a tremendous change in the measured characteristics. The curves are discussed in comparison with numerical simulations of the measurements, where the known surface states are also included.