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HL: Halbleiterphysik

HL 32: Halbleiterlaser I

HL 32.3: Vortrag

Mittwoch, 10. März 2004, 18:15–18:30, H17

Modeling of optical properties for type-II semiconductor lasers — •Christoph Schlichenmaier¹, Jörg Hader², Jerry V. Molony², Angela Thränhardt¹, Mackillo Kira¹, and Stephan W. Koch¹ — ¹Philipps-Universität & Wissenschaftliches Zentrum für Materialwissenschaften Marburg — ²Arizona Center for Mathematical Sciences and Optical Sciences Center, University of Arizona, Tucson, AZ 85721

Design of advanced semiconductor laser structures demands the insightful use of compound materials consisting of many constituents. Smart alignment of heterostructure layers like type-II structures is an additional way of band gap engineering. Quantum optical modeling of electron and photon dynamics[1,2] connected with a realistic band structure explains optical properties and device performance and helps to map out the parameter space. We discuss gain, α-factors and luminescence for various systems.

[1] A. Girndt, S.W. Koch, and W.W. Chow, Appl. Phys. A 66, 1 (1998).

[2] M. Kira, F. Jahnke, W. Hoyer, and S.W. Koch, Prog. Quantum Electron. 23, 189 (1999).