Regensburg 2004 – scientific programme

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HL: Halbleiterphysik

HL 33: III-V Halbleiter I

HL 33.1: Talk

Wednesday, March 10, 2004, 18:15–18:30, H14

GaMnAs grown by MOVPE under RAS control — •Alexander Philippou, Stefan Weeke, Markus Pristovsek, and Wolfgang Richter — Institut für Festkörperphysik, SFb 296, Technische Universität Berlin

Under the aspect of spin electronics dilute magnetic III-V semiconductors are of great interest. In this contribution we report on Mn doped III-V semiconductors which were grown by metal organic vapor phase epitaxy (MOVPE). In contrast to Molecular Beam Epitaxy the growth temperatures are much higher (≥ 500^∘C). Thus the need for in-situ control is even more severe for MOVPE. We used reflectance anisotropy spectroscopy (RAS) to monitor the doping level and roughness during growth. We determine the critical layer thickness of GaMnAs and correlate the results with in-situ ellipsometry and ex-situ x-ray diffraction studies.