Regensburg 2004 – scientific programme
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HL: Halbleiterphysik
HL 37: Quantenpunkte und -drähte: Transporteigenschaften
HL 37.7: Talk
Thursday, March 11, 2004, 11:45–12:00, H13
Hole transport through an array of self-assembled Ge quantum dots — •Kai-Martin Haendel1, U. Denker2, O. G. Schmidt2, and R. J. Haug1 — 1Institut für Festkörperphysik, Universität Hannover, Appelstr. 2, 30167 Hannover — 2Max-Planck-Institut für Festkörperforschung, Heisenbergstr. 1, 70569 Stuttgart
In recent years, several features of quantum states in self-assembeld Ge
quantum dots have been
demonstrated by various spectroscopic studies, such as admittance,
capacitance-voltage analysis,
photoluminescence and photoluminescence excitation spectroscopy.
We use transport spectroscopy to determine the electronic properties of
self-assembeld Ge hut cluster
quantum dots that are embedded in the quantum well of a Si/SiGe-based
resonant tunnelling diode. At temperatures below 300 mK and high magnetic
fields scaling behavior in the non-linear current-voltage (I−V)
characteristic, switching events and
hysteresis are observed and are dedicated to states of a
collective charge mode.