HL 40: SiC I
Donnerstag, 11. März 2004, 15:15–16:30, H15
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15:15 |
HL 40.1 |
Homoepitaxial growth of 4H-SiC:Ge alloys on 4H-SiC (0001) substrates by Molecular Beam Epitaxy — •Petia Weih, Thomas Stauden, Lothar Spieß, Henry Romanus, Oliver Ambacher, and Jörg Pezoldt
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15:30 |
HL 40.2 |
Micro-electromechanical systems based on 3C-SiC/Si heterostructures — •Christian Förster, Volker Cimalla, Michael Fischer, Klemens Brückner, Matthias Hein, Jörg Pezoldt, and Oliver Ambacher
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15:45 |
HL 40.3 |
Deep Levels of Gadolinium in Silicon Carbide — •Gunnar Pasold, Fanny Albrecht, Christian Hülsen, Rainer Sielemann, Wolf Dietrich Zeitz, and Wolfgang Witthuhn
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16:00 |
HL 40.4 |
Oxynitrides on 4H-SiC(0001) — •Patrick Hoffmann and Dieter Schmeißer
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16:15 |
HL 40.5 |
The sequential annealing of radiation-induced intrinsic defects in SiC — •M.V.B. Pinheiro, U. Gerstermann, E. Rauls, Th. Frauenheim, S. Greulich-Weber, and J.-M. Spaeth
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