Regensburg 2004 – wissenschaftliches Programm
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HL: Halbleiterphysik
HL 40: SiC I
HL 40.4: Vortrag
Donnerstag, 11. März 2004, 16:00–16:15, H15
Oxynitrides on 4H-SiC(0001) — •Patrick Hoffmann and Dieter Schmeißer — BTU Cottbus, Lehrstuhl Angewandte Physik II / Sensorik, Universitätsplatz 3-4, 03044 Cottbus
It will be reported on the growth of oxynitride thin layers (≤10nm) on (0001)-oriented 4H-SiC surfaces. The oxynitride layers were grown by a thermal treatment of the samples in low pressure N2O ambient. By varying the growth conditions (N2O pressure, sample temperature, growth time) different layers were made.
The grown layers were investigated by photoelectron spectroscopy (XPS) for chemical analysis and by AFM/STM for analysis of the surface morphology. Concerning the chemical analysis it will be discussed the general nitrogen content of the samples, the composition of the films (e.g. content of silicon nitride Si3N4 and silicon oxynitride SiOxNy) and the sub-oxides which build the interface between SiC and the oxynitride layers. Concerning the surface morphology mainly the roughness will be discussed.
The so obtained results for oxynitride thin films on 4H-SiC will be compared to similarly prepared oxynitride layers on Si(111) investigated in the past.