Regensburg 2004 – scientific programme

Parts | Days | Selection | Search | Downloads | Help

HL: Halbleiterphysik

HL 40: SiC I

HL 40.5: Talk

Thursday, March 11, 2004, 16:15–16:30, H15

The sequential annealing of radiation-induced intrinsic defects in SiC — •M.V.B. Pinheiro, U. Gerstermann, E. Rauls, Th. Frauenheim, S. Greulich-Weber, and J.-M. Spaeth — Departament Physik, Universit"at Paderborn, Warburger Str. 100, 33098, Paderborn , Deutschland

The understanding of sequential annealing dynamics of radiation-induced defects in SiC has been of highly technological interest. The main reason for this is that most SiC devices require ion-implantation doping, which generates intrinsic defects with a high thermal stability. In this work we present a complete model for the sequential annealing of several defects generated by electron-irradiation in SiC. Among these defects there are several unidentified ones that disappear above 150C, the isolated silicon vacancy that between 600C and 750C is converted in the silicon antisite - carbon vacancy pair, and finally the D1 center whose concentration strongly increases above 900C. The latter is the end-product visible with photoluminescence up to 1700C. Our model is based on a systematic isochronal annealing investigation performed in 6H-SiC and 4H-SiC with photoluminescence (PL), electron-paramagnetic resonance (EPR) and magnetic circular dichroism of the absorption (MCDA), and is fully consistent with ab-initio calculations.