HL 43: III-V Halbleiter II
Donnerstag, 11. März 2004, 15:15–16:30, H14
 |
15:15 |
HL 43.1 |
Raman spectroscopy of Ga(As,N) epitaxial layers under hydrostatic pressure — •M. Güngerich, P.J. Klar, W. Heimbrodt, J. Koch, W. Stolz, M.P. Halsall, and P. Harmer
|
|
|
|
15:30 |
HL 43.2 |
Zirkular photogalvanischer Effekt bei Interband-Anregung in Quantentrögen — •Petra Schneider, S.D. Ganichev, V.V. Bel’kov, C. Back, M. Oestreich, J. Rudolph, D. Hägele, L.E. Golub, W. Wegscheider und W. Prettl
|
|
|
|
15:45 |
HL 43.3 |
Determination of the nitrogen distribution in GaInNAs/GaAs quantum wells by transmission electron microscopy and correlation with spectroscopic data — •M. Hetterich, A. Grau, D. Litvinov, A. Rosenauer, D. Gerthsen, Ph. Gilet, and L. Grenouillet
|
|
|
|
16:00 |
HL 43.4 |
Real-time growth monitoring using multichannel-RAS — •Ch. Kaspari, F. Poser, S. Weeke, and W. Richter
|
|
|
|
16:15 |
HL 43.5 |
Optical cross sections of the deep defect centers in low temperature grown GaAs — •G.H. Döhler, C. Steen, C. Metzner, R. Schmidt, P. Kiesel, and S. Malzer
|
|
|
