Regensburg 2004 – scientific programme

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HL: Halbleiterphysik

HL 43: III-V Halbleiter II

HL 43.4: Talk

Thursday, March 11, 2004, 16:00–16:15, H14

Real-time growth monitoring using multichannel-RAS — •Ch. Kaspari, F. Poser, S. Weeke, and W. Richter — Technische Universität Berlin, Institut für Festkörperphysik, Sekr. PN 6-1, Hardenbergstraße 36, D-10623 Berlin

Since its development by Berkovits, Aspnes and co-workers in the 1980ies, reflectance anisotropy spectroscopy (RAS) has become an important in situ-technique to investigate the epitaxial growth of semiconductor surfaces and interfaces. However, for growth monitoring on a sub-second time scale one is usually restricted to transient measurements at one single photon energy.

We have developed a special RAS setup that is capable of measuring transients at eight different photon energies simultaneously in the spectral range between 1.4 and 4.5 eV, thus allowing for a simple 8-point RAS spectrum every 100 ms. This technique was used to investigate fast growth processes in III-V-MOVPE, e.g. oxide desorption, GaAs buffer growth and N/As group V switching processes.