Regensburg 2004 – scientific programme
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HL: Halbleiterphysik
HL 44: Poster II
HL 44.11: Poster
Thursday, March 11, 2004, 16:30–19:00, Poster A
Measurement of the barrier height of Ni-Schottky contacts on GaAs in high magnetic fields — •Holger von Wenckstern1, Michael Ziese1, Rainer Pickenhain1, Gisela Biehne1, Volker Gottschalch2, Pablo Esquinazi1, and Marius Grundmann1 — 1Universität Leipzig, Institut für Experimentelle Physik II, Linnéstraße 5, 04103 Leipzig — 2Universität Leipzig, Institut für Anorganische Chemie, Linnéstraße 3, 04103 Leipzig
In recent years spin injection into semiconductors and spin transport phenomena have attracted a growing interest in the physical society. The evidence that spin was injected and transported has mainly been provided by optical means [1]. In this contribution we make a first step towards probing the spin polarization of a metal on a semiconductor by electrical measurements. We have tested a simple model concerning a Schottky contact between a ferromagnet and a semiconductor predicting the lowering of the Schottky barrier due to the Zeeman effect [2]. We have employed this new method to Ni-Schottky contacts on n-type GaAs which were prepared by evaporating this ferromagnetic metal onto the surface of the semiconductor. The Schottky-barrier height of the contacts was determined from capacitance-voltage and current-voltage measurements in a temperature range from 10 to 300 K. The applied magnetic field was varied between 0 and 9 T.
[1] H. J. Zhu et al., PRL 87, 016601 (2001).
[2] “Spin Electronics”, edited by M. Ziese and M. J. Thornton, Springer Verlag, Heidelberg, 2001, p. 24.