Regensburg 2004 – wissenschaftliches Programm
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HL: Halbleiterphysik
HL 44: Poster II
HL 44.18: Poster
Donnerstag, 11. März 2004, 16:30–19:00, Poster A
AFM-Lithography on Cleaved Edges of Ga[Al]As-Heterostructures — •E. Reinwald1, M. Lermer1, M. Reinwald1, W. Wegscheider1, D. Weiss1, D. Schuh2, M. Bichler2, and G. Abstreiter2 — 1Universität Regensburg, Institut für Experimentelle und Angewandte Physik, 93040 Regensburg — 2Walter Schottky Institut, Technische Universität München, Am Coulombwall, 85748 Garching
We use the technique of local anodic oxidation with an atomic force microscope (AFM) to modulate two-dimensional electron systems (2DES) on cleaved surfaces of GaAs/AlGaAs heterostructures. In combination with the atomically precise modulation by cleaved-edge overgrowth (CEO) employing a GaAs/AlGaAs superlattice various interesting structures can be realised. Our aim is to create a two-dimensional electron system with modulation in both directions. In these systems magnetotransport experiments are supposed to reveal an energy signature, known as the Hofstadter butterfly. So far we have fabricated one dimensional lattices with periods down to 50 nm on flat GaAs(110) 2DES. The modulation of the 2DES can be measured in magnetotransport experiments. Furthermore we have developed a method to contact and measure the two-dimensional electron system on the cleaved surface in hallbar geometry.
This project is supported by the DFG Schwerpunktprogramm 1092 and by the BMBF (01BM918).