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HL: Halbleiterphysik

HL 44: Poster II

HL 44.51: Poster

Donnerstag, 11. März 2004, 16:30–19:00, Poster A

Phonon modes and infrared dielectric functions of Cu-, Fe-, Ga-, Li-, N-, P-, Sb-doped ZnO thin films — •Carsten Bundesmann, Mathias Schubert, Holger von Wenckstern, Michael Lorenz, Evgeni Kaidashev, and Marius Grundmann — Fakultät für Physik und Geowissenschaften, Institut für Experimentelle Physik II, Universität Leipzig, Linnéstraße 5, 04103 Leipzig

Raman spectroscopy and mid-infrared spectroscopic ellipsometry was applied to study Cu-, Fe-, Ga-, Li-, N-, P-, Sb-doped ZnO thin films deposited on differently orientated sapphire substrates using the pulsed laser deposition technique. Raman spectroscopy reveals additional modes related to the different dopant species, while spectroscopic ellipsometry allows the determination of wave numbers and broadening parameters of the ZnO-type phonon modes, and free charge carrier parameters. The broadening parameters are closely related to the thin film quality. Furthermore, infrared spectroscopic ellipsometry can be used to determine crystal orientation as shown for ZnO thin films grown on a-plane oriented sapphire.
[1] C. Bundesmann et al., Appl. Phys. Lett. 83, 1974 (2003)