Regensburg 2004 – scientific programme
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HL: Halbleiterphysik
HL 44: Poster II
HL 44.52: Poster
Thursday, March 11, 2004, 16:30–19:00, Poster A
Well-width dependent electron spin dephasing in (110) GaAs QWs — •Stefanie Döhrmann1, Maik Begoin1, Dieter Schuh2, Max Bichler2, Daniel Hägele1, and Michael Oestreich1 — 1Universität Hannover, Institut für Festkörperphysik, Abteilung Nanostrukturen, Appelstr. 2, 30167 Hannover — 2Technische Universität München, Walter-Schottky-Institut, Am Coulombwall, 85748 Garching
Recently the electron spin in semiconductors has become a focus of intense research in the context of spintronics. A prime condition for the development of potential applications is the understanding of spin decoherence in semiconductor structures. We have measured spin dephasing times in (110) GaAs quantum wells (QWs) in dependence on well width in a temperature range from 6 to 300 K. The sample under investigation is an undoped, wedge shaped GaAs/AlGaAs multiple quantum well grown on (110) oriented substrate. The electron spin dephasing times were determined by means of time and polarization resolved photoluminescence spectroscopy using a synchroscan streakcamera for detection.