Regensburg 2004 – scientific programme
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HL: Halbleiterphysik
HL 44: Poster II
HL 44.53: Poster
Thursday, March 11, 2004, 16:30–19:00, Poster A
Electron spin dephasing in biased GaAs quantum wells — •Joachim Fritzsche1, Jörg Rudolph1, Daniel Hägele1, Markus Beck2, Stefan Malzer2, Gottfried Döhler2 und Michael Oestreich1 — 1Institut für Festkörperphysik, Universität Hannover, Appelstr. 2, D-30167 Hannover — 2Institut für Technische Physik I, Universität Erlangen-Nürnberg, Erwin-Rommel-Str. 1, D-91058 Erlangen
Electron spin dephasing times are of basic interest in the course of "spintronics" and its potential for applications. One important spindephasing mechanism depends on electron hole exchange interaction which is determined by the overlap of electron and hole wavefunctions and, therefore, can be tuned by external electric fields.
We measure electron spin dephasing times in a biased GaAs quantum well in dependence of temperature and electric field applied perpendicular to the layers. The sample consists of a single undoped 20 nm GaAs quantum well sandwiched between 100 nm Al0.35Ga0.65As barriers. Electron and holes are excited by ps-pulses of an 80 MHz mode-locked Ti:Sapphire laser. Electron spin dephasing times are determined by time and polarization-resolved photoluminescence which is detected by a synchroscan streakcamera.